Application of well characterized e - beam evaporated WSe2 thin films in Schottky Barrier diodes

The studies of semiconductor thin films and their junctions such as metal semiconductor junctions (Schottky Barriers) have received much attention due to their applications in various electronic and optoelectronic devices including high frequency switching device, Schottky barrier devices, solar cells etc. But, realization of any electronic device using a combination of bulk and thin film or all bulk or all thin film components essentially requires metallization of metal contacts for electrical signals to flow into and out of the device. Thus junction between two metals and metal-semiconductor is an integral part of the device without which communication to the external circuit components would not be possible. In this reference stable metalsemiconductor contacts of ohmic as well as rectifying nature are very much important from technological point of view. In both cases preparation of reliable and efficient metal contacts with high yield and stability is challenging task for devices operating at high frequencies when packing density is increased by many fold. Thus, the behavior of metal-semiconductor contacts at microscopic scale may be explored for the development of future technology.;The subject matter of such contacts is well documented in many books with review of developments in the recent past. Earlier devices were prepared on the bulk elemental semiconductors as an active region which was then followed by crystalline/amorphous compound semiconductors in bulk as well as thin film forms like Solar cells, p-n junction diodes, Schottky barrier devices etc. in recent past. Normally bulk crystalline'or amorphous substrate is used to support device structure made from crystalline/amorphous bulk and thin film. However, to the best of author's knowledge no attempts have been made to study the devices prepared by depositing semiconductor thin film with thin metal film supported by a by a non-conducting glass substrate.;For this purpose, studies were carried out on structural, optical, electrical properties of pWSe2 thin film and its applications in thin film Schottky diode.;Tungsten Diselenide (WSe2) is the sparkling member of Transition Metal Dichalcogenides (TMDC) materials of group VIA and VIB which have received considerable attention because of its diverse semiconducting properties along with anisotropic characteristics arising from their layered structure, which is widely studied and reported by many scientists in both single crystals and thin film form. Due to its anisotropic natures of X - M - X (where X - chalcogen, M - metal) can be easily cleaved along c - axis which makes it the most potential candidate for flexible electronic devices like Schottky barrier devices, MESFETs, solar cells etc. Looking towards the wide applications reported by many scientists, it was proposed in the present case to study the growth and characterization of tungsten diselenide - WSe2 in thin film form and its applications in Schottky barrier diode. The results of the studies have been presented in the thesis written in seven chapters. (Abstract shortened by ProQuest.).