Circuits for high-density low-power content-addressable memories | Posted on:2004-10-08 | Degree:M.A.Sc | Type:Thesis | University:University of Toronto (Canada) | Candidate:Arsovski, Igor | Full Text:PDF | GTID:2468390011466504 | Subject:Engineering | Abstract/Summary: | | This thesis presents two novel circuits that increase memory density and reduce power consumption in Content-Addressable Memories (CAM). The proposed ternary CAM (TCAM) cell uses a four-transistor (4T) static storage element to achieve ternary implementation in the same area as previously reported binary CAM cells. This reduction in cell size improves TCAM density by 25%. The proposed match-line (ML) sensing scheme dynamically allocates less current to match-lines with more mismatches. This mismatch-dependent current allocation reduces power consumption by 60%. | Keywords/Search Tags: | CAM | | Related items |
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