Growth and characterization of cadmium sulfide grown by chemical bath deposition for copper indium diselenide photovoltaic thin film solar

Cadmium sulfide polycrystalline thin films were grown in a soda lime glass substrate, by the chemical bath deposition method. The decomposition of thiourea in an alkaline solution of a cadmium chloride on the surface of Cu(In-Ga)Se2 with molybdenum substrate at temperature ranging at 65-85 degrees Celsius and pH of 10-11.5. After the deposition, the layer is characterized for structural, optical and electrical properties. The effects of the of individual reactant concentration, the temperature of the solution and the deposition time and the physical properties are analyzed. A slower rate in deposition was observed to be caused by the overall lower concentration and the increasing of temperature resulted in a faster rate while the long deposition time resulted in a thicker film which appeared dark yellowish or orange in color. SEM, EDS, we performed to determine the properties of the deposited thin films.;The Scanning electron microscope analyzation of the sample with EDS showed that the films were all stoichiometric in atomic ratios grown under all the three different conditions of varying solution temperature, varying the deposition time and varying the concentration of the reactants; keeping the other two parameters constant respectively. The films were all deposited under constant stirring giving out uniform films for all the three parameters. It was difficult to get the resistivity of the films from the hall effect measurements, the four point probe measurements, as there was no current observed to pass through. Future research in this thin film should consider doping the cadmium sulfide to improve conductivity.