| A novel experimental technique has been used to determine thermal conductivity of boron doped diamond films. The method allows for electrical resistance heating for a range of resistivities, therefore possessing the capability to estimate thermal conductivities for different doping levels. Boron doped diamond films were deposited using the hot filament technique. Boron powder precisely placed during the diamond deposition process contributed to diamond growth with varying resistivities from sample to sample (and within each sample). The resistance of each sample was measured using the four probe method. Samples were chemically etched to obtain a 3mm diameter of free standing diamond film. The samples were then prepared, energized, and monitored using an infrared imaging system. Temperature distribution across the 3mm diamond window was extracted and used to estimate the film's thermal conductivity. Results show that thermal conductivity decrease as doping level increase. The thermal conductivity values range from 205 to 975 W/m K, while the uncertainty range from {dollar}pm{dollar}10 to {dollar}pm{dollar}65. The samples' resistivities, which were used to quantify the level of doping, were measured in the region where temperatures were acquired and varied from 1.63 {dollar}Omega{dollar} cm to 68.4 {dollar}Omega{dollar} cm. |
