Ion implantation damage in silicon dioxide studied with positron annihilation spectroscopy

hermally grown SiO;In insulating materials such as SiO;Analysis of the measured defect profiles, and comparison with TRIM Monte Carlo simulations, allows us to deduce the relative contributions of the nuclear and electronic stopping to the radiation damage, which was nearly constant as a function of depth. It was found that 22% of the predicted vacancies remained after the recombination of defects and that the energy necessary to produce defects by ionization was...