| Controlled surface modification is accomplished with hyperthermal (1–500 eV) and low energy (0.5–10 keV) ion beams. This control is accomplished by mass-selection (MS) to determine the ion identity, energy-selection for a specific energy range, and predetermined dose to determine the extent of ion-surface interaction per area. Hyperthermal ion beams are used for film growth of three different organic materials: organ osiloxanes, fluorocarbons, and thiophenes. Secondary ion mass spectrometry (SIMS) uses atomic and polyatomic ion beams in the low energy range for surface analysis, which causes changes in the substrate material from ion bombardment. Study of the ion-surface interactions in both the hyperthermal and low energy ranges provides insight into SIMS analysis and plasma deposition.; Polyatomic primary ions in SIMS analysis is known to give a large secondary ion yield enhancement when compared with atomic primary ions. Studies here compare SF5+ and Ar+ primary ion sputtering of polymer films combined with surface analysis. It is demonstrated that the polyatomic enhancement does not corroborate with the total desorption yield, the latter being significantly smaller.; This thesis also employs surface chemical and morphological analyses to examine films grown from hyperthermal MS ion beam deposition. The films grown from different precursors show dramatic differences when varying the incident ion energy. Organosiloxane and thiophene film chemistry changes with increasing ion energy, while fluorocarbon film chemistry is independent of ion energy. Changes in the morphology of the organosiloxane and fluorocarbon films also occur as ion energy is increased. MS ion beam deposition of films are chemically and morphologically similar to those deposited by plasma deposition. Non-mass-selected deposition of thiophene films is also examined and shows promise due to both the chemical similarity and increased growth rate compared to MS deposition. |
