Optical properties of indium gallium arsenide/gallium arsenide quantum dots in semiconductor waveguides

InGaAs/GaAs self-assembled quantum dots are semiconductor nanostructures with 3-dimensional confinement. Their atomic-like density of states offers potential advantages over other semiconductor structures in optoelectronic devices and makes for an ideal semiconductor platform to study the physics of two-level systems. In this thesis, I analyze the unique properties of quantum dot lasers and discuss their potential application as optical amplifiers. I also directly measure the absorption coefficient of different quantum dot ensembles and determine an average dipole moment of 30 Debye. The carrier dynamics in the resonantly excited ground state transition are then measured using temperature dependent differential transmission spectroscopy. Ground state excitons escape from the quantum dot by multiple phonon emission with a time constant that increases from 32 ps to 130 ps as the sample temperature is reduced from 295 K to 230 K.