Design, construction, and implementation of a high-voltage, pulsed-power test bed for the study of gallium arsenide and silicon carbide optically triggered switches

Research in the field of optically triggered semiconductor switches has investigated various materials for high power applications. Gallium Arsenide (GaAs) and Silicon Carbide (SiC) are two of the materials investigated. SiC has arrived on the optical switch scene and has quickly surpassed GaAs with its improved electric field hold off, current conduction, and physical strength. The start of the project involved research into semiconductor geometries for electric field hold-off for GaAs as well as a test bed design and construction for testing GaAs and SiC with DC and pulsed power. Two test beds were designed to meet the requirements demanded for testing of these switches. One test bed was designed for the DC testing of smaller wafers. The second test bed was designed for pulsed power application where higher voltage and current would occur. A custom screen room was constructed to help shield sensitive equipment from electromagnet noise. Along with the test beds, the laser system with the appropriate trigger timing circuitry was setup. Preliminary results of testing the switches as well as optical absorption data for the SiC are included in the paper. This project, from design to testing is addressed in this paper.