| The objective of this work is to use MOSFET dosimeters to accurately measure surface dose delivered during CT examinations in various scanning conditions. To achieve this, the behaviour of MOSFETs under kilovoltage x-ray irradiation first needed to be investigated. A dose-to-dose reproducibility of 4.5%, and a mean change in sensitivity response of 10.4% with accumulated dose were measured. A Monte Carlo model of the x-ray source of a PQ5000 CT simulator was built and validated in order to investigate the MOSFET response characteristics and perform dose calculations. An over-response of 10% was observed when the beam energy was decreased from 140 to 80 kVp, and a slight anisotropy of 8.5% from the mean value over 360° was observed. The dosimeters were calibrated on a solid water phantom using a method involving MC surface dose calculations. Good agreement was found between measurements and simulations of surface dose on a cylindrical PMMA phantom for a stationary tube technique, single axial scan and multiple contiguous axial scans, with generally less than 7.5% discrepancies. Film and MOSFET measurements were then performed for helical adult brain scan parameters using different pitch and collimator settings. The use of five MOSFETs combined in a linear array was found to be suitable to accurately measure surface dose in helical scans for almost all pitch and collimation combinations. |
