| Semiconductor crystals are of the foundation of the electronics industry. The widening field of applications for solid-state electronic devices has pushed the need for new, application tailored, semiconductor materials. Specifically, there is demand for production of compositional controlled ternary semiconductor materials.;The ternary material CdZnTe has been the subject of interest due to its attractive physical qualities. As a substrate, it is ideal for HgCdTe infrared detector applications. As a solid-state detector, CdZnTe is a very promising room-temperature gamma ray and hard x-ray detector. This kind of detector would see major application in the medical imaging field. Current commercial techniques have proved unsatisfactory in producing high quality CdZnTe material.;A new promising technique for producing bulk semiconductor crystals is liquid phase electroepitaxy, LPEE. As a solution growth technique, it avoids many of the problems associated with growing CdZnTe from the melt. This makes LPEE an attractive alternative to current growth techniques.;This study tested the feasibility of growing CdZnTe by LPEE. The interaction of CdZnTe with the LPEE system was thoroughly investigated. The result of the study was the successful initiation of LPEE growth. LPEE is a promising technique for producing high quality material. Some difficulties remain with the growth system that were beyond the scope of this study, such as the contact zone. Further study is necessary to mature this technique. |
