Effects of impurities on deuterium retention in single crystal tungsten | Posted on:2006-11-20 | Degree:M.A.Sc | Type:Thesis | University:University of Toronto (Canada) | Candidate:Quastel, Aaron D | Full Text:PDF | GTID:2451390005496972 | Subject:Engineering | Abstract/Summary: | | The role of impurities in the retention of deuterium in single crystal tungsten implanted at room temperature has been investigated. To avoid the effects of air exposure, the D+ implantation and the subsequent D retention measurement using thermal desorption spectroscopy were performed in the same vacuum system without breaking vacuum. For fluences of 1 x 1023 D/m2 prominent desorption peaks were observed during TDS, one at ∼400 K and one at ∼600 K. The use of liquid nitrogen cooling of the ion beam aperture led to a reduction of the background gas impurities (O and C containing molecules) in the vacuum chamber, which consequently almost completely eliminated the post-irradiation TDS peak at ∼400 K. Reduction of these gas impurities by ∼50% has led to a reduction of ∼20% in the total deuterium retention. Furthermore, weakly bound deuterium in the W specimens was released when the vacuum system was mildly baked to ∼360 K before TDS, resulting in an approximately 50% reduction in the total amount of retained D. It was also found that post-implantation time delay before performing TDS leads to a significant loss of the implanted deuterium; ∼25% of the implanted deuterium escapes from the W specimens during the first 24 hours and ∼55% after about eight weeks. | Keywords/Search Tags: | Deuterium, Impurities, Retention, Implanted, TDS | | Related items |
| |
|