Font Size: a A A

C60:LiF hole blocking layer for Bulk-Heterojunction solar cells

Posted on:2011-11-06Degree:M.A.ScType:Thesis
University:University of Toronto (Canada)Candidate:Gao, DongFull Text:PDF
GTID:2442390002456063Subject:Engineering
Abstract/Summary:
A standard procedure for P3HT:PCBM bulk-heterojunction solar cells has been developed. Fabrication conditions, such as environment; solution concentration, thickness of active layer or post-treatment methods are systematically optimized. The best device performance is obtained by slow-drying spin-coated P3HT:PCBM (1:0.8) blend layer with DCB as solvent. C60:LiF composite films with up to 80% LiF concentration as hole blocking layer have been developed to significantly increase power conversion efficiencies of OPV devices. The short-circuit current density is greatly enhanced, without sacrificing open-circuit voltage and fill factor. Due to its superior oxygen diffusion blocking effect, the C60:LiF composite layer also can provide a more effective passivation film than a thin LiF layer, resulting in an impressive enhancement in air stability of devices.
Keywords/Search Tags:Layer, Lif, C60, Blocking
Related items