Surface kinetics of common semiconductor materials in FC plasmas

This research is intended to increase understanding of the surface kinetics of common semiconductor materials in high density fluorocarbon plasmas. In order to achieve this goal, a modified GEC reference cell was used in tandem with diagnostic tools such as in situ ellipsometry to measure process rates, in situ Fourier transform infrared (FTIR) spectroscopy to measure gas-phase chemistry, optical emission spectroscopy (OES) to measure fluorine density, and a self bias probe. This research is divided into two sections to examine the fluorocarbon deposition mechanism and various substrate etch mechanisms separately. The first section examines surface kinetics with only low energy ion bombardment. The special chamber design allows decoupling of the ion and radical fluxes. Thus, approximate sticking coefficients are developed for depositing ions and radicals. Additionally, an etch yield coefficient is presented for fluorine without the significant aid of energetic ion bombardment. These results are then compiled into a model and compared to experimental process rates. The second section qualitatively looks at surface kinetics under energetic ion bombardment. This section examines future studies necessary for a complete understanding of this area.