Research On The Preparation And Performance Of P-type Metal Oxide Field Effect Transistors

Over the past few decades,metal oxide semiconductor?MOS?-based thin-film transistors?TFTs?have attracted considerable attention because of their remarkable properties,such as high field-effect mobility,large-area uniformity,and high transparency in the visible range.TFTs have been widely used in large-scale displays.However,technological development has been limited to n-type material TFTs.There are rare investigations on the p-type metal oxide-based TFTs,due to the limited choice of p-channel MOS and the harsh preparation conditions.It is of great potential to be applied in flexible electronics,including transparent flat panel display,integrated circuit,LED,solar cell and so on,once the high-performance p-type semicondcutors are achieved.In this report,ternary p-type perovskite NdAlO₃ thin films were prepared by spin coating and annealed at various temperatures.It is demonstrated that neodymium vacancies(V_Nd)is generated in NdAlO₃ thin film,and the presence of V_Nd results in high hole mobility.The TFTs based on NdAlO₃ thin film were integrated and exhibit typical p-channel transistor behavior.The TFT based on NdAlO₃ thin film annealed at 700°C exhibits an optimized electrical performance,including a field-effect mobility(?_FE)of 0.19 cm²/Vs and an on/off current ratio(I_on/I_off)of 10⁵.When high-k Al₂O₃ dielectric was integrated into the TFTs,the?_FE and I_on/I_off are further improved to 9.93 cm²/Vs and 10⁶,respectively.In addition,one-dimensional metal oxide nanofibers have been attracting considerable attention due to their specific characteristics,such as large specific surface area and unique electrical properties.In this work,p-type NdAlO₃ nanofibers field-effect transistors?FETs?were fabricated by electrospinning process.The electrical performances of the FETs based on NdAlO₃ nanofibers annealed at various channel coverage and annealing temperature was systematically studied.This work not only demonstrates the possibility of p-type perovskite NdAlO₃ thin films/nanofibers applicable for transparent electronics,but also provides guidelines for the design of novel p-type oxide semiconductors.