Research On The Preparation And Performance Of Organic Thin Film Transistors Based On CZ-PT

In recent years,with the popularity of smart devices,people have increased the performance parameters of basic originals.More and more people are studying organic thin film transistors?OTFT?.There are many advantages of OTFT,including low cost,can be prepared and composed of logic circuits on a flexible substrate,simple preparation and large-scale manufacturing.OTFT is used in displays,wearable devices,sensors and detectors.However,OTFT also has many shortcomings that need to be resolved,such as low crystallinity of organic semiconductors,high threshold voltage and poor stability.This article synthesized a new type of polymer?CZ-PT?using carbazole and phenolphthalein that made thin film transistors by CZ-PT and studied its performance.The thermogravimetric characteristics,ultraviolet characteristics,infrared characteristics and electrochemical characteristics of CZ-PT are characterized.The band gap width of the polymer is 2.34e V,which can be calculated according to its ultraviolet spectrum.Through thermogravimetric analysis,the thermal decomposition temperature of the polymer is 365?.Through electrochemical analysis,the highest occupied molecular orbital?HOMO?and lowest unoccupied molecular orbital?LUMO?energy levels of the polymer can be calculated are-5.16 e V and-2.82 e V,respectively.The CZ-PT polymer is used as the active layer material,and three different materials?PVP,PVA,PMMA?are used as the insulating layer materials to form an organic thin film transistor and the effects of different insulating layers on the OTFT characteristics are compared.Then use the best performance of the insulating layer material OTFT to explore the annealing temperature and annealing time to the OTFT.Through experiments,it can be known that the device with PMMA as the insulating layer has excellent characteristics,and the thickness of the insulating layer is 863 nm.The active layer has excellent characteristics when annealed at 150?for 30 minutes.The carrier mobility is 1.83×10^-2cm²V^-1s^-1,the threshold voltage is-4.63 V,and the switching ratio is 1.2×10⁴.