TMO Doped In₂O₃ Semiconductor Performance Research And Field Effect Device Construction

Metal oxide semiconductors are widely applicable in thin film transistors?TFTs?due to their excellent physical properties and electrical stability.Metal oxide-based TFTs have recently received considerable attention as strong candidates for the realization of flexible,large-area,low-cost electronic devices,such as active matrix displays,electronic paper,and smart identification cards.These applications are enabled by their intriguing properties,including their high mobility,low-temperature processing,and reasonable reliability,compared to their counterpart amorphous Si TFTs.Up to now,several methods have been used to fabricate metal oxide TFTs.Among various methods,electrospinning process and solution process are one of the simplest approaches for large-area applications and low-cost consumption devices.In this work,high-performance enhancement-mode TFTs based on Ti doped In₂O₃nanowires were successfully integrated.It is found that the device performance could be effectively modulated by adjusting the doping concentration of Ti.The TFTs based on In₂O₃nanowires with Ti doping concentration of 3 mol%exhibits excellent performance,including an on/off current ratio of¹.5×10⁸,a positive V_TH of 6.23 V,and a mobility of2.53 cm²/Vs.The overall device performance of the TFTs based on InTi_3%O nanowires is further boosted by employing sol-gel derived ZrO_x as gate dielectric.The mobility of the designed device is improved to be 12.67 cm²/Vs.Finally,the unipolar inverter based on InTiO nanowires/ZrO_x TFT was integrated.In addition,solution processed InZrO/InZrO bilayer TFTs were fabricated by employing SiO₂ as gate dielectric.A thin layer of InZr_2%O offers a higher carrier concentration,a thick layer of InZr_15%O controls the charge conductance,and resulting in low off-state current and suitable threshold voltage.Such bilayer architecture addresses the relatively high I_off of In₂O₃ TFTs.The TFTs based on InZr_15%O/InZr_2%O bilayer exhibits excellent performance,including an on/off current ratio of³×10⁸,and a mobility of 13cm²/Vs.When high-?ZrO_x dielectric is integrated into the TFTs,the mobility of the designed device is further improved.All of these results demonstrate that InZrO/InZrO bilayer TFTs are promising candidates for the applications in future display backplanes.