Preparation Of ?-? Co-doped ZnO Thin Films By Sol-gel Process

Semiconductor materials with ?-? family of elements have good optoelectronic properties.Where the transparent conductive oxide(transparent conductive oxide)represented by zinc oxide(zinc oxide,zno)is relatively best.ZnO direct band gap semiconductor.Compared with other materials zno they are rich in resources,low in price,pollution-free and non-toxic,the structure is not easily changed after doping,and have good photoelectric properties and relatively stable chemical properties.In this paper,boron and nitrogen elements were introduced into zno film by sol-gel spin coating process(sol-gel).BZO and BNZO films were prepared on glass and silicon substrates,respectively.The structural,surface morphological,and optical performance of the samples were invested by X-ray diffraction(XRD),scanning electron microscope(SEM),PL spectrum and ultraviolet-visible UV-Vis spectrophotometer.The research contents and results are as follows:1.Study on the Properties zno Films Prepared by Different Sol Concentration.Found that the sol concentration directly affected the growth of zno film crystals.Select 0.4 mol/l of sol concentration,zno film has the best crystallization performance,along the(002)crystal plane preferred orientation,the transmittance can reach more than 80%,there are good uv and defect luminescence peaks.2.Study on the Properties of zno thin films prepared with different boron doping content.The incorporation of the b results in the deterioration of the axial preferred orientation c the zno film and the decrease of crystallinity;The surface energy of the film becomes worse;The transmittance is obviously increased,up to 90%,Corresponding to the increase of band gap.3.Study on the properties of BNZO films prepared with different nitrogen content.With the increase of n doping amount,the crystallinity of b-n co-doped zno films did not improve.When the n doping amount is 3.0 at%,it is suitable for film growth,the c axis orientation is relatively good,the crystallinity is high,the surface performance of the film is the best,the transmittance is 90% left,and the band gap is further increased;the uv luminescence peak is suppressed,which has obvious defect luminescence peak.