Theoretical Calculation And Experimental Research On The Energy Band And Electronic Properties Of SnO,Ag₂S Semiconductor

SnO is a blue-black metal crystalline powder,stable at room temperature and pressure.The direct band gap of the semiconductor material is 2.7e V,the indirect band gap is 0.7e V,the hole mobility can reach a higher level,the theoretical value is 641cm2V-1s-1,and the larger electron affinity（3.7e V）It is conducive to n-type doping,and the lower ionization potential（4.4e V）is also conducive to p-type doping.Therefore,it will further expand the practical application of this material and is expected to develop a new semiconductor material;The n-type semiconductor material with direct band gap（Eg≈0.93 e V）has extremely high absorption coefficient and good characteristics of light,heat and electricity,and has good photoelectric properties and extremely high chemical stability.This can be used as an ideal candidate material for the development of a new generation of thermal devices.This paper focuses on the following characteristics of semiconductor materials:1.In this paper,MS software is used to calculate the energy band and state density of intrinsic SnO and Sb,Al-doped SnO semiconductors,intrinsic Ag₂S and Te-doped Ag₂S by using first-principles calculation methods.Compare the difference in energy band and overall state density,and analyze the effect of doping on its electronic properties.2.The magnetron sputtering method was used to prepare SnO,SnO / Al and SnO / Sb semiconductor thin films,and the different characteristics and properties of the samples were studied by changing the experimental parameters.The experimental method was used to observe the surface morphology of the material,the film thickness and the chemical composition of the material.Based on the experimental results,the influencing factors before and after doping were discussed.3.Use Keithley's 4200 SC semiconductor characteristic tester to pass the IV characteristic test of SnO,SnO / Al and SnO / Sb semiconductor transistor devices with changing gate voltage,changing the doping amount of Sb and Al,and with or without light conditions.The test results found that SnO / Al showed no significant difference in IV characteristic curve under the presence or absence of light,and SnO / Sb showed higher sensitivity.Therefore,the prepared SnO / Sb can improve semiconductor materials,and the photoelectric characteristics can be applied to the materials of the next generation CMOS device field.4.Through the detection of thermoelectric materials,it is found that the Ag₂S sample has a high σ value,but the S value is low.It is found that the thermoelectric figure of merit ZT can be improved by doping calculation.At the same time,further improve the thermoelectric characteristics of Ag₂S.