Research And Application Of Online Measurement Method For Junction Temperature Of GaN HEMT Devices

With the rapid rise of artificial intelligence and modern industry,the semiconductor industry has made great progress.According to Moore's Law and industry trends,power semiconductor discrete devices and integrated modules are developing in the direction of small size,high integration and high withstand voltage.Devices in a unit area are subject to greater power consumption and temperature rise,represented by GaN and SiC materials.The third generation of semiconductor materials has received more and more attention from researchers.Compared with the first and second generation semiconductor materials,GaN materials have wider band gaps,corresponding intrinsic excitation temperatures,and natural advantages in resisting high temperature and high voltage.GaN-based HEMT devices are RF and high temperature resistant.And the excellent characteristics of high pressure resistance and other aspects ensure its broad development prospects.However,the dynamic power loss introduced by the high-frequency switching process and the high-power operating conditions under the condition of high current and high voltage cause the internal junction temperature rise of the HEMT device,which restricts the long-term reliability of the device.Temperature is an important indicator to measure the reliability of the device.Real-time monitoring of the junction temperature variation of the device can provide objective criteria for engineers and technicians,and can prevent burnout problems caused by excessive junction temperature and long-term reliable operation of protection devices and circuits.Have important help.In this regard,this paper has carried out related research work from the following aspects:The research work includes the following aspects: 1.First,based on the electrical temperature measurement method,according to the temperature characteristics of the gate reverse bias current of the HEMT device,a junction temperature test method with the gate reverse bias current as the temperature sensitive parameter is proposed.In this paper,the components of the reverse bias current are theoretically analyzed.The temperature characteristics of the parameters are explained by physical modeling and the relevant factors affecting the parameters are proved by experiments.2.Aiming at the specific working process of HEMT devices,an engineeringoptimized method for optimizing temperature-sensitive parameters and improving the temperature-sensitivity characteristics of the parameters is proposed.On this basis,the temperature characteristics of reverse-bias currents under high temperature conditions are theoretically studied.The phenomenon of "cliff" is theoretically explained.Combined with the experimental results,a high-speed and effective method for preventing junction temperature overheating damage is proposed.3.The transport process and influencing factors(various scattering)of twodimensional electron gas in HEMT devices are analyzed.The theoretical derivation is based on the inherent properties(output characteristics)of the device.The temperature characteristics of the parameters between the source and the drain of the device are used to study another temperature.A temperature sensitive parameter set for engineering applications.4.The controlled factors and changing conditions of the source-drain current voltage temperature characteristics are studied.The measured temperature curves under different conditions prove the influence of the gate voltage on the temperature characteristics of the source-drain parameters.Aiming at different practical application conditions of HEMT devices,a corresponding method for preventing high temperature damage is proposed.Summarize the research results,and propose more flexible temperature-sensitive parameter selection criteria based on theoretical models and experimental conclusions,and promote the application range of the research parameters.