Preparation And Properties Of PZT-based Ferroelectric Thin Film Transistor

Non-volatile memory plays an important role in electronic equipment,and ferroelectric gate dielectric transistor has attracted more and more attention due to its characteristics of non-destructive readout,high speed and radiation resistance.In recent years,flexible electronics has become a research hotspot with the development of wearable devices and various intelligent products,and transparent electrode is an important part of it.Mica has become one of the promising flexible transparent substrates by virtue of its bendability,atomically flat surface,etc.Indium tin oxide(ITO)is a widely used transparent electrode that,when combined with a flexible substrate,can lead to many new electronic devices.Flexible ferroelectric transistor is also one of the research directions.Based on magnetron sputtering,an epitaxial lead zirconate titanate(PZT)film was prepared on a strontium ruthenate(SRO)buffered strontium titanate(STO)single crystal substrate,and its structure and ferroelectric properties were characterized.The sample with better ferroelectric performance was obtained.On this basis,PZT ferroelectric thin film transistor was prepared by means of micromachining.Through the analysis of electrical properties,it can be seen that PZT has a very strong regulatory role.The transistors with zinc oxide and indium gallium zinc oxide as the channel can both achieve a large switching ratio.The influence of interface trap charge on transistor characteristics can be reduced by adjusting transistor structure and heating.Subsequently,ITO films were prepared on mica to study the effects of different processes and annealing conditions on ITO,and to characterize the surface morphology,lattice structure,electrical and optical properties and mechanical properties of different samples.The prepared ITO films have low resistivity,high transmittance and bending resistance.Finally,the flexible PZT ferroelectric thin film transistor was prepared by combining PZT with mica substrate.Devices with titanium/platinum as the bottom electrode and ITO as the top electrode can achieve a large switching ratio and maintain a low leakage.