The Study Of High-performance Doped InZnSnO Thin Film Transistor

Thin film transistor(TFT)is an essential core component in active driving display,which is widely used in various flat panel displays(FPDs).In recent years,with the development of display technology in the direction of high resolution,large size and 3D display,traditional silicon-based thin film transistors have been unable to meet the requirements of the next generation of display technology due to their low mobility and poor uniformity in large area.However,the amorphous metal oxide thin film transistor(AOS-TFT)have attracted researchers'attention because of its high mobility,large area,high opening rate,good uniformity and low temperature preparation.However,there are still some problems in metal oxide thin film transistors at present,such as low mobility,unstable performance and so on.To solve these problems,we have developed a series of InZnSn O thin film transistors,the main work is as follows:(1)The InZnSnCuO TFT was prepared by magnetron sputtering.The influence of annealing temperature on the performance of InZnSnCuO TFT has been studied.The experimental results show that Cu doping increases the internal defects of the active layer film,which leads to a large subthreshold swing of the device.The?is 12.6 cm~2/Vs,the SS is 10.26V/dec.(2)The InZnSnClO TFT was prepared by magnetron sputtering.The influence of annealing temperature and active layer thickness on the performance of InZnSnClO TFT have been studied.The experimental results show that CL doping improves the number of defects in the film to a certain extent comparing with Cu doping,because the subthreshold swing of device has been improved,but the mobility and performance are not good enough.The?is 12.7 cm~2/Vs,the SS is 1.97 V/dec.(3)The InZnSnMgO TFT was prepared by magnetron sputtering.The influence of annealing temperature,active layer thickness,oxygen flow rate and other conditions on the device performance were studied in detail.The bias stability of the device is also studied,and its mechanisms are discussed.In addition,the optical properties and microstructure of the thin films were also studied,the active layer is transparent in visible light and amorphous.The experimental results show that the incorporation of Mg makes the TFT have high mobility,large switch ratio and small subthreshold swing.The?is36.6 cm~2/Vs,the SS is 0.34 V/dec.