Research On PdO/Si And ZrTe₅/Si Heterojunction Silicon-based Photodetectors

Photo-detection is very important in various fields,such as communication,display,environmental monitoring and so on.And the application of new materials in photodetector has always been one of the hot issues,especially the metal oxides with high-stability and dirac semimetal materials.In this study,the photodetecors based on PdO/Si and ZrTe₅/Si heterojunctions were fabricated and investigated due to the pillar position of silicon in state-of-the-art microelectronic technology.The large-area uniform PdO film was prepared by oxidizing the Pd film deposited with electron beam evaporation.Based on this,PdO/Si heterojunction photodetector was constructed,which exhibited a peak response at 970 nm.The photodetector showed excellent repeatability and stability in air for the high stability of PdO and Si.What's more,pulse laser deposition was carried out to prepare semimetal material ZrTe₅ film.The detector based on ZrTe₅/Si heterostructure showed a low dark field current of3.40×10^-7 m A at zero bias,and was sensitive to the change of light intensity.Its Ilight/Idark ratio can reach 1.68×10⁴ at light intensity of 19.7 m W/cm².And under the illumination of 650 nm,the responsivity and detectivity of the device can reach 120 m A/W and 10¹² Jones,respectively.These results indicate that the present Si hetero-junctions may find promising application in future optoelectronic devices and systems.