IP Modeling For RF Chips

Integrated radio frequency system is the critical Front-end,shorten the product development cycles is important for improving the system performance,it can be related by building IP models.Combining device modeling and layout design can construct chips' IP model and reflect characteristics completed.Collaborative design of RF chip IP enables fast upgrade iterations.The third-generation semiconductors represented by GaN and GaAs have high electron mobility and high breakdown electric field.With the increasing demand for high-power output performance in RF systems,the third-generation semiconductors have been widely used in RF arrays.Therefore,the research on IP model of GaN and GaAs RF chips is of great significance for the efficient and high level research and development of RF systems.The main content researched are as follows:1?Milimeter wave GaAs power amplifier chips' IP model.In order to model the GaAs power amplifier working in the frequency of 29~39GHz,the IP model of power amplifier based on EEHEMT model was established.Firstly,DC IV,S parameters and large signal performance of GaAs HEMT device were measured.Based on the test of the S parameters,extract parasitic parameters and the intrinsic parameters,a small signal equivalent circuit model is established.On the basis of the small signal equivalent circuit model,according to the large signal performance and DC IV characteristics,experience based EEHEMT model is established.Combining device modeling and layout design construct the IP model,the accuracy of the model was verified by comparing the simulation result and the measured data.2?Microwave GaN power amplifier chips' IP model.In order to model the x-band GaN power amplifier,dc IV and S parameters and large signal characteristics of GaN HEMT were tested.According to the partitioning model theory,the Quasi-Physical zone division model was established,and the accuracy of the amplifier model was verified through joint simulation with the layout of power amplifier chip.3?Modeling of GaAs switch chip.The switch IP model is established for GaAs PIN diode switch.First test to get the DC IV characteristics,S parameters and powersweep of PIN diode,and a shunted PIN diode unit model was established.In order to model the modulation effect of the I area,the relationship of charge-current was derived based on the bipolar diffusion equation.Using the Pade approximation method,lumped equivalent circuit was established,and applied to the main circuit by controlled sources.The shunted pin-diode model is combined with the layout of the switch chip,The simulation results obtained by the model are in good agreement with the measured results,indicating that the model is available.