Research On Failure And Recovery Characteristics Of Area Array Imaging Device

The photoelectric imaging system mainly takes CCD and CMOS as the core module,which has widely used in security,aviation,aerospace,industry,agriculture and other fields because of its high sensitivity,high definition and long working time.However,the strong light irradiation will interfere with the imaging process of the imaging device,making it unable to accurately and clearly image the original target signal,or even make the device completely unable to image.When the interference source is removed or its radiation characteristics are changed,the output image of the device will gradually recover or be able to be clearly imaged,but the photoelectric imaging system loses its original imaging function during the interference light irradiation and a period of time when the radiation characteristics are changed.Based on this,this paper takes time,effect degree,speed and stability as evaluation indexes of failure and recovery characteristics,and studies the performance effects of laser irradiation characteristics including power,time and position.This project selects WP-UF130 M CMOS device produced by Huagu Power and CR-GEN0-M6400 CCD device produced by Daheng Group as the research subjects,and uses the laser of high-sensitivity wave band 650 mm of these two television imaging devices as the hard irradiation light source.The specific research content is as below:Firstly,the basic structure of CCD and CMOS is analyzed,and the threshold measurement system is designed and built based on the magnitude difference between the hard damage threshold and saturation threshold.The experimental results show that the saturation of the two kinds of devices is similar;the law of saturation area expansion is the same,which satisfies the linear relationship between the laser power at the entrance pupil and the number of saturated pixels in the double logarithmic coordinate system;a mathematical model is established to estimate the correlation threshold of devices at different positions in a given imaging system.Then,based on Johnson's criterion,the common image processing method is improved,and the new algorithm NFRANR(New-Full Reference and No Reference)is established,and the value NF is obtained.The interference effect image is quantized into 4×7 different levels by the saturation area ratio and NF value.According to the quantization results,the interference failure level of the interference image is divided.For the research of image restoration quality,the amount of pixel value change at the corresponding position is quantified,which the restored images are respectively between the pre-interference image,the interference image,and therestored images at different times.Combined with FSIM(Feature Similarity Index)when restoring stable imaging,the restoration effect of device output image is evaluated.The device used in this paper needs less than 0.1s to restore the imaging effect after removing interference.Finally,use the established failure assessment criteria and recovery methods,the influence of irradiation conditions on device failure and recovery characteristics is analyzed:Irradiation power has the greatest effect,which is positively correlated with failure degree and negatively correlated with recovery level;irradiation time does not affect the degree,but it will increase the recovery time;the change of irradiation position has a more significant effect on the stability in the direction of smaller pixel distribution scale.Therefore,it is very important and significant to study the failure and recovery characteristics of output image of planar array imaging device.On the one hand,from the direction of device production and use,the environmental adaptability of photoelectric imaging system can be improved;On the other hand,as a combat target in the field of electro-optical countermeasures,it can provide theoretical guidance and design direction for the construction of radiation jamming system.