Research Of Silicon Michelson Interferometric Electro-optic Modulator

Owing to the low cost,compact size,good stability and scalability,silicon-based semiconductor chips have dominated the entire electronic information industry for a half century.Information Age based on the microelectronics technology is gradually taking place of Electronics Time.However,with the continually growing information demand,and the more complex circuit design and chip function,the traditional electrical interconnect has been more difficult to satisfy the requirements for low power consumption,low crosstalk and ultra-high-speed information processing.Silicon-based optical devices have the merits of large bandwidth,high speed,low cost,low power consumption,and compatibility with complementary metal-oxide-semiconductor(CMOS)technology.On the one hand,it can be a solution to the"electronic bottleneck".On the other hand,as one of the most promising platforms for potential low-cost mass production and photonic-electronic convergence on a single chip,there is a far-reaching significance to develop silicon-based integrated optoelectronic technology.Thisthesisfocusesonthehigh-speed,low-lossand high-extinction-ratio silicon Michelson interferometric(MI)electro-optic modulator.First,the working principle of the MI modulator and the theoretical background with analysis methods relevant to each component are described,which can be used to guide the optical and electrical design of the MI modulator.The basic components that compose the MI modulator are 2×2 MMI coupler,carrier-depletion PN junction,and single-drive push-pull traveling wave electrode(TWE).Then the thesis presents the device simulation and optimization in detail.The design procedure developed in this research is suitable for most single-drive push-pull silicon electro-optic modulators.Finally,the thesis demonstrates a low-loss high-extinction-ratio silicon MI modulator with a low on-chip insertion loss of 3 dB.The modulator features a compact size of<1 mm~2 and a static high extinction ratio of>30dB.The V?·L?of the MI modulator is 0.95-1.26 V·cm under a reverse bias of-1 V to-8 V,indicating a high modulation efficiency.Experimental results show that the MI modulator can realize 20 Gb/s OOK,30 Gb/s BPSK and 40 Gb/s PAM-4 modulations with clear eye diagrams.