Fabrication Of High Performance SnS₂ Field Effect Transistor And Study Of Its Photoelectrical Properties

Field effect transistors are one of the most basic and important electronic devices in the microelectronics and semiconductor industries.Their structure,performance and size have an important impact on the design,integration and energy consumption of electronic components.In recent years,field-effect transistors based on new two-dimensional semiconductor materials have attracted wide attention due to their small size,high performance,low energy consumption,etc.Two-dimensional semiconductor materials are considered due to their unique layered structure and electron transport properties.It is one of the ideal materials to continue Moore's Law.The two-dimensional semiconductor material tin disulfide?SnS₂?has the advantages of rich reserves of elements,environmental friendly and no pollution.At present,it has been fully researched and applied in the fields of solar cells,gas detection and electrocatalysis,but its research on field effect transistors and photoelectric detection are limited.In view of this,our research takes tin disulfide as the research object,starting from the electrical and optoelectronic performance factors of field effect transistors,based on metal-semiconductor contact theory,dielectric layer mechanism and structure design,material surface modification,systematic research,and finally The design method and construction technology of high performance tin disulfide field effect transistor were obtained.Considering the characteristics of two-dimensional semiconductor material field effect transistor,the influence of various components of the device on the performance of the device is theoretically analyzed.The three influencing factors of metal electrode contact,dielectric layer properties and structure,material modification and doping are established.The microstructural characteristics and energy band structure information of tin disulfide materials were analyzed by means of optical microscopy,atomic force microscopy,Raman spectroscopy and transmission electron microscopy,which provided theoretical support for subsequent experimental research.Systematic research on the construction process of tin disulfide field effect transistor,using field transfer technology,laser direct writing photolithography technology,metal coating process and Lift-off process to construct field effect transistor devices;based on metal-semiconductor contact theory,design electrode contact Experiments and comparative studies on the effects of different work function metal electrode contacts on the electrical and optoelectronic properties of the device,metal silver?Ag?is preferred as the ideal contact material for subsequent research.Furthermore,the device structure is designed from the perspective of dielectric layer properties and structure.The hexagonal boron nitride is used as the dielectric layer to reduce carrier-surface scattering.The local channel regulation and full-channel regulation are designed and constructed.The top gate field effect transistor device,and the influence law of the two structural devices on the electrical properties of the device are studied in detail.According to the difference of the influence of the structure on the electrical performance of the device,the field effect transistor with suitable structure is selected for the following surface modification research.Disodium edetate?EDTA?was used to process our as fabricated field effect transistors.The first principle calculation and Hall effect test were used to reveal the synergistic effect of EDTA on surface defect repair and electron doping of tin disulfide to improve the electrical properties of the device.The method is applied to the local channel-controlled top-gate field effect transistor,which realizes the double improvement of the electron mobility of the tin disulfide field effect transistor(8.77 cm²V^-1s^-1)and the switching current ratio?2×10⁷?.It is at the leading level in the current literature reports.