Molybdenum Doped Vanadium Dioxide Film Growth And Device Preparation

In the vanadium oxide series,vanadium dioxide(VO₂)can be doped with appropriate ions to change the VO₂ phase transition temperature due to its excellent phase transition properties,by preparing VO2 in the form of thin films and nanostructures and doping in these materials.Ions can induce various optical and electrical conversions at different temperatures.It is of great significance to study how to incorporate ions into VO₂ materials and regulate their phase transition temperature.According to the research direction and application requirements of VO₂ film,this paper uses MoO₃ and V₂O₅ powder as the reaction source to control the phase transition temperature of VO₂ by doping Mo ions,and studied the morphology and structure of VO₂ by doping ions in detail,the effects of phase change performance,and research on photoelectric response performance.This paper innovatively uses vapor-solid method?VS?to grow Mo-doped VO₂ film,characterized by SEM and XRD.The nano-film was preferentially grown along the[110]direction and was a high-purity single crystal film.The resistance of VO₂ film with temperature at different doping concentrations was tested by setting the control group to change the doping concentration.The test results show that when the doping concentration of Mo is 9%,the phase transition temperature of the VO₂film is lowered to 49°C.Obviously,the doping of Mo ions can effectively reduce the VO₂phase transition temperature.Based on the photoelectric response performance of doped VO₂ film,the response characteristics of the film under different wavelength laser irradiation of 532nm,635nm,780nm and 808nm were studied.The results show that the Mo-doped VO₂ film exhibits excellent photoelectric behavior and good reproducibility.The photocurrent shows a strong dependence on the irradiation power density.As the power density increases,the photocurrent increases accordingly.A field effect transistor?MOSFET?device with a doped VO₂ film as a conductive channel is designed.The device is fabricated by photolithography,etching,electron beam evaporation,magnetron sputtering deposition and other processes.The I_DS-V_G transmission characteristic test,I_DS-V_DS output characteristic test and visible light and infrared light response characteristic test were carried out.The electrical characteristics showed that the regulation of channel resistance could be realized by changing the gate voltage?V_G?.Photoelectric studies have shown that by increasing the gate negative voltage,the photocurrent response time can be shortened and the response speed is faster,and the prepared MOSFET device is confirmed to have higher sensitivity and fast response capability.