Preparation Of InZnO-based Double Active Layer TFT

In recent years,Thin Film Transistor(TFT),as a semiconductor switch for TFT-LCD and AMOLED,has attracted more and more attention for its high mobility,large area uniformity and high transmittance in the visible range.Researchers have extensively studied the InZnO(IZO)-based TFT.The mobility of the IZO:N TFT and IZO:Li TFT can reach up to 39.3 cm2V-]s-1 and 80.4 cm2Vv1,respectively.However,their annealing temperature was up to 950?.High annealing temperature makes the cost of preparation too high for industrial production.In order to reduce the annealing temperature for preparing the IZO-based TFT,we have attempted to prepare IZO-based double active layer TFT.Compared with searching for new active layer materials,it is a strategic and practical method to change the active layer structure of TFT.The main research work is as follows:1.The double active layer IZO:Li/InZnSnO(IZTO)TFT was fabricated by magnetron sputtering under the annealing temperature of 120? in oxygen atmosphere.The effects of the thickness of the underlying IZO:Li thin film near the gate insulation layer and the thickness of the upper IZTO thin film near the source-drain aluminum electrode on the electrical properties of IZO:Li/IZTO TFT were investigated.2.The IZO:N/IZTO TFT was prepared by magnetron sputtering.Firstly,the effect of annealing temperature on the electrical properties of IZO:N/IZTO TFT was investigated under oxygen.Secondly,the effect of annealing in oxygen,nitrogen and air atmosphere on the electrical properties of IZO:N/IZTO TFT was studied under the condition of annealing temperature fixed at 325?.The crystalline state of IZO:N thin film and IZTO thin film were characterized by X-ray diffraction(XRD),and the light transmission properties of IZO:N thin film and IZTO thin film were studied.3.At the annealing temperature of 325? under oxygen,The effects of IZO:N thin film and IZTO thin film thickness on the electrical properties of IZO:N/IZTO TFT were investigated,respectively.As a control,the electrical properties of single active layer IZO:N TFT and IZTO TFT under the same annealing condition were investigated.The surface morphology of IZO:N thin film and IZTO thin film was studied by scanning electron microscopy(SEM).