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Study On Low-Dimensional Semiconductor Materials Perovskite And Tellurium's Growth,Physical Property Characterization And Device Fabrication

Posted on:2020-05-22Degree:MasterType:Thesis
Country:ChinaCandidate:R M BianFull Text:PDF
GTID:2428330575487307Subject:Physical Electronics
Abstract/Summary:PDF Full Text Request
Perovskites have always been a hot spot in the field of solar cells.With the deepening of perovskite research,people have discovered its potential value in the field of luminescence,especially in the field of lasers.However,the most intensive research in the field of optoelectronics is the methylamine lead halide perovskite.This organic-:inorganic doped perovskite is easily eroded by water.Therefore,this thesis focuses on the study of an all-inorganic perovskite structure——CsPbBr3/CsPbI3,which is more stable than the organic-inorganic doped perovskite.In addition,the current growth of solid perovskites is largely dependent on mica substrates,which are tightly bonded to materials and are hard to transfer.Therefore,we have used a different CVD growth method,using flexible materials(PDMS)as the substrate,which makes the transfer easier and more convenient.We obtained the all-inorganic perovskite material by using this growth method,and analyzed its morphology,PL spectrum,pump laser spectrum and strain modulation.The results show that the perovskite nanosheets have a natural whispering gallery mode cavity,which can achieve single mode whispering mode laseing.Finally,we successfully fabricated a two-color laser device using two different elements of solid all-inorganic halide perovskite(CsPbBr3/CsPbI3).Finding next-generation FET materials has always been a top priority in the materials field.Researchers have explored graphene,molybdenum disulfide,black phosphorus and indium selenium,all of which failed to be perfect FET materials for some reasons.A theoretical article published by Zhu Zhili et al in 2017,it shows that material with the same atomic thickness as graphene can be made of tellurium atoms,which is stable in nature,has high mobility,and has a suitable band gap.Therefore,tellurium has become a hot spot for people to explore the field effect transistor materials.Based on this,this thesis is devoted to the study of the growth and related properties oflow-dimensional tellurium,and successfully synthesized a one-dimensional material by vapor deposition,and then characterizes its morphology,Raman spectral anisotropy and electrical properties.The results show that one-dimensional tellurium is an anisotropic material and has good electrical conductivity.Finally,a groundbreaking attempt was made to prepare a photovoltaic device by using the method of micro zone transfer to make a heterojunction of tellurium and molybdenum sulfide.
Keywords/Search Tags:Perovskite, Tellurium, Growth, Characterization, Devices
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