Band Anti-crossing Effects Of Gallium/Indium Semiconductor Alloy

With the continuous development of semiconductor industry technology,various kinds of semiconductor materials are emerging.As an important role in the research of semiconductor materials,gallium and indium semiconductor alloys have been widely used in solar cells,optoelectronic devices,ultra-high-speed devices,microwave devices and other fields.In semiconductor electronic devices,Auger recombination is an important factor affecting the device performance.The study found that the Auger composite effect would greatly limit the working efficiency and temperature stability of photovoltaic devices,and become a bottleneck in the development of photovoltaic devices.In this paper,the Bi-atoms with high spin-orbit splitting energy has been doped into the gallium/indium intrinsic alloy from the electronic energy band structure of the semiconductor,and the feasibility of suppressing the Auger composite effect is proposed.At the same time,the application of the quaternary compound InAsNBi in superlattice infrared detectors has also proved.The main contents of this paper are as follows:(1)The properties of N,Bi materials doped in the semiconducting of gallium/indium compounds were studied by Band Anti-crossing Model.Since the relative sizes of ?SO and Eg are important indicators for measuring the operational efficiency and temperature stability of semiconductor optoelectronic devices.Firstly,the effect of erbium on gallium and indium compounds was analyzed.The curves of spin-orbit splitting energy ?SOo and band gap Eg with Bi concentration were calculated.The results show that the Bi impurity state interacts with the intrinsic semiconductor valence band.The splitting of the valence band leads to a reduction in the band gap.In order to further improve the regulation range of the semiconductor energy band,the energy band structure of the quaternary alloy InPNBi and InAsNBi was calculated and studied.In the calculation of the quaternary alloy,the influence of the substrate on the band offset of the semiconductor material is considered.The results show that the concentration of InAsNBi in N exceeds 2.2%,and the concentration of Bi is greater than 5%,which can suppress the Auger composite effect.(2)The multi-quantum well band structure of InAsNBi/GaSb superlattice structure and the traditional InAs/GaSb type ? superlattice structure are calculated and compared.The InAsNBi layer used in the superlattice structure is capable of suppressing Auger recombination.The electron band changes between the different superlattice structure were studied and compared.The calculation shows that the InAsNBi/GaSb superlattice can maintain the cutoff wavelength of the InAs/GaSb device,and it will have a wider application prospect in the application of infrared detectors.