PTCDI-C13 N-type Thin-film Field-Effect Transistor And Applications

Flexible organic field-effect transistors?OFETs?have attracted a great deal of interest due to their potential application in flexible conformal electronics and optoelectronics.However,the development of n-type flexible OFETs was slow comparision with the flexible p-type OFETs,mainly due to lack of n-channel organic materials with air stability and good performance.In view of the important applications of n-type field-effect transistors in electronic circuits and optoelectronic circuits.Therefore,it is very important to develop the n-channel OPTs for future applications in portable and wearable organic electronics.N,N0-ditridecyl-3,4,9,10-perylenetetracarboxylic diimide?PTCDI-C13?is a typical n-type organic semiconductor material with good field-effect characteristics and excellent stability.In our experiments,PTCDI-C13 thin film field-effect transistors were fabricated based on high-quality PTCDI-C13 thin film.We have investigated electronic and optoelectronic properties of the flexible OFETs.The main results of this paper are as follows:1.N-type organic thin-film transistors?OTFTs?were fabricated based on high-quality PTCDI-C13 thin film by vacuum deposition on PMMA,c-PVA and PVA dielectric layer.The optimal deposition condition and the optimal field-effect properties can be obtained when substrate temperature was 45 ^oC and the deposition rate was 0.05?/s with different dielectric layers.The PTCDI-C13 OTFTs showed good properties and exellent operation stability with PMMA dielectric layer.The mobility of the PTCDI-C13 OTFTs was up to 0.53 cm²V^-1s^-1,and the current on/off was higher than 10⁸ which were the highest value reported based on PTCDI-C13 thin film.2.The ultra-thin flexible OTFTs were fabricated with the PMMA dielectric layer and PVA supporting layer or the PMMA/PVA dual-layer based on high-quality PTCDI-C13 thin film.The thickness of two kinds of OTFTs were 830 nm and 590 nm.These ultra-thin flexible devices have excellent stability?operation stability and long-term stability?and good field-effect properties.The mobility was higher than 0.5 cm²V^-1s^-1 and the highest current on/off were 10⁷ and 10⁸,respectively.These ultrathin flexble devices have enhanced mechanical tolerance which remain good field-effect properties under bendable,conformal onto a hemispherical lens or crumpling conditions.These results indicated that the ultrathin flexible transistors presented the promising potential applications in flexible conformable electronics.3.The ultra-thin flexible organic phototransistors?OPTs?were fabricated with the PMMA dielectric layer and PVA supporting layer based on high-quality PTCDI-C13 thin film.The highest photoresponsivity and photosensitivity were 31.5 AW^-1 and 2.8×10⁴,respectively.These devices have enhanced mechanical tolerance,the photosensitivity keeps unchanged of2×10⁴ under bendable conditions.When the flexible OPTs conformed onto a hemispherical lens,all measured phototransistors were high up to 10⁴ in photoresponsivity which keep consistent with on flat.These results present the promising potential of conformable air-stable n-type PTCDI-C13 OPTs for applications in wearable and portable electronics and optoelectronics.