Simulation On Performance Of SiC Base IMPATT Diode

Electromagnetic wave within the Terahertz frequency range are widely used in communication,detection,medical,radar and other fields.The impact avalanche transit time(IMPATT)diode is a kind of useful solid-state terahertz wave source due to high output power.The third-generation semiconductors of SiC and GaN with high band-gap width,carrier saturation drift velocity and thermal conductivity than those of Si,GaAs and InP materials,which are suitable for high frequency,high temperature,high voltage and high power solid-state electronic devices.Therefore,the study of SiC-based IMPATT devices holds of important value in theory and application.In present thsis,the performance of IMPATT diodes with different crystalline SiC homogeneous junction,SiC/Si and SiC/GaN heterojunctions in the atmospheric window frequency of 0.85 THz were simulated by numerical calculation method.(1)A small signal model of drift-diffusion mechanism was used to simulate the DC and AC performance of 4H-SiC,6H-SiC,3C-SiC homojunction IMPATT diodes,and the tunneling effect on the performance of the devices was taken into accounted.(2)Based on the large signal model of drift-diffusion,numerical calculation was carried out to emulate the DC and AC performance for(p)4H-SiC/(n)Si,(p)6H-SiC/(n)Si,(p)3C-SiC/(n)Si heterojunction IMPATT diodes.(3)Utilizing the quantum corrected drift-diffusion large signal model,numerical simulating the DC and AC performance of(p)SiC/(n)GaN,(n)SiC/(p)GaN heterojunction IMPATT diodes was performed.Via above mentioned numerical simulating and further comparing the performance of IMPATT diodes with different SiC homojunctions,SiC/Si and SiC/GaN heterojunctions in the Terahertz range,one can optimize the device structural parameters for improving the performance and further guide for designing and manufacturing the Terahertz SiC-based IMPATT diodes.