Research Of Photodetector Based On Microstructure And Quantum Dot

As the main carrier of information transmission in information life,photoelectric detector is an important device in information life.In the field of optical communication,industrial control and military field,it is widely used.It is the physical layer foundation of emerging Internet of things,cloud computing and big data.Recently two-dimensional photoelectric detector attracted more and more attention.But two-dimensional materials photodetector,because of its ultrathin thickness,the general absorption rate is low.And the acquisition of higher,faster,wider photoelectric detector becomes the research target.The main object of this paper is how to improve the performance of photodetector.In order to improve the response speed of photoelectric detector and responsivity,one through the structure design of the device,made a vertical ultrashort controllable channel,device structure and its top electrode formed by metal from shock yuan,for the high degree of response and fast photoelectric detector provides a train of thought;Secondly,the response degree of tungsten disulfide photodetector is improved by using the grating effect of the quantum dot.1.Design,preparation and photoelectric application of vertical micro-nanostructure.We have designed a kind of "metal-insulating-metal" layer the vertical structure of short channel,the channel length is determined by the thickness of insulating layer,atomic layer deposition technique can be used to control the channel is very short.The short channel can hold the light response speed of the photodetector,and because the top electrode is the micro-nano hole metal,it can generate the isozonal excited element to enhance the light absorption,thus increasing the photoelectric current.Because of the low light absorption rate and zero band gap of graphene,the light loudness is very low.In order to solve this problem,can use the device structure,through the top electrode hole metal enhance light absorption,to get a high speed and high responsivity photodetectors.2.Graphene oxide quantum dot-tungsten disulfide photodetector.In this paper,the photoresistance of tungsten oxide photodetector is improved by using the method of solution swirl.It's responsiveness increased from 0.26mA/W to 12.5mA/W.It's light response increased 48 times.Moreover,the quantum dots are green environmental protection and low consumption quantum dots,which have little impact on the environment.There are two main reasons:the first is the built-in electric field formed at the interface of the two materials,and the second is the grating effect of the quantum dots of the graphene oxide.In conclusion,we have successfully applied the graphene quantum dot disulfide photodetector to achieve high responsivity photoelectric detection.It provides reference and thought for future photoelectric device exploration.