Study Of Memory Devices By Using Ferroelectronic Organic Matericals For Application

In recent years,with the continuous advancement of science and technology,organic electronics has also developed rapidly.Moreover,organic electronic devices have unique performances in comparison with traditional inorganic devices,especially in material acquisition,industrial production processes,and practical applications.Therefore,people apply organic materials,organic electronic devices,and various related organic electronic devices.In terms of research,it is highly valued by universities and research institutes in the world.The organic materials can be used as a semiconductor layer or gate dielectric in the field-effect transistors.Whether it is the nature of materials or the diversity of manufacturing methods,it provides more possibilities for the development of electronic devices in the future.In addition,field-effect transistor memories based on ferroelectric organic materials also have many problems,such as short memory time,long data access time,and slow operation speed.This also restricts the commercial application of organic memory devices.However,ferroelectric organic memory has attracted intensive attention because of their promising potential in large area,flexible,high integration,so the organic field-effect transistor(OFET)memory has more advantage in the future of developing.This thesis mainly focuses on ferroelectric organic materials and their applications in field-effect-transistor memory devices.The following two studies have been specifically studied as follows1.In this work,to fabricate high-speed ferroelectric organic field-effect transistor(Fe-OFET)memories,we chose two-dimensional(2D)organic molecular crystals Cs-BTBT and ferroelectric polymer P(VDF-TrFE)with a solution-based process.We employed a novel method that inserts an ultrathin poly(methyl methacrylate)(PMMA)between ferroelectric polymer and organic semiconductor layers via the vertical phase separation.The ultrathin PMMA is beneficial in improving the surface morphology of the ferroelectric layer and suppressing polarization fluctuation,and the charge carrier transport is enhanced.Furthermore,our device can improve the efficiency of charge injection by using 2D molecular crystal,so our Fe-OFETs can obtain excellent electrical performance.A high charge carrier mobility of 5.6 cm2/Vs and an on/off ratio of up to 106 were extracted from the prepared device.The fabricated device also exhibits a rapid switching time between the two states,which is a?2,9 ms delay from the on-to off-state and a?3.0 ms delay from the off-to the on-state.Our work will be expected to fabricate OFET memories on the flexible substrate,so our method is capable of large scale,high performance,low cost and rapid response of Fe-OFET memory2.This work investigated the use of ferroelectric polymer P(VDF-TrFE)and inorganic oxide indium silicon oxide(InSiO)in combination to produce a high-performance ferroelectric field effect transistor(Fe-FET)memory device.This work combines ferroelectric organic materials with inorganic oxide materials to produce high-performance devices.During the annealing process of the gate insulating layer P(VDF-TrFE),the interaction between the P(VDF-TrFE)and the InSiO interface causes an increase in the charge density in the conductive channel,which affects the electrical performance of the device.In addition,we also studied a series of electrical performance comparisons of the device during P(VDF-TrFE)different annealing processes.The highest charge mobility was 84.1 cm2/Vs in the low frequency.The results of this study indicate that the Fe-FET memory we prepared opens up the research and application fields of the next generation of electronic products.