Research And Design Of On-chip Temperature Measurement Circuit Based On 55nm Process

With the development of IC technology,the chip integration level is increasing,which will increase the chip power consumption and temperature.To avoid chip damage caused by high operating temperatures and to ensure the stability and reliability of the chip circuit,this thesis presents a temperature test circuit inside the chip,which provides temperature signals for the temperature compensation module to realize temperature control and the temperature regulation,which will make the chip cirtuit works in the normal temperature range.This design was based on Global Foundry 55nm CMOS process.A bandgap reference circuit was adopted to measure the temperature,and a successive approximation analog digital conversion?SAR ADC?was applied for converting the signal.The bandgap reference voltage with low temperature drift coefficient was realized by using the bandgap reference with operational amplification structure,and the designed parameters was deeply discussed.The ADCs with different structures were analyzed and compared in the thesis,and the circuit parameters of SAR ADC were in detail described.To reduce the influence of resistance on SAR ADC circuit,a bootstrapped switch circuit was designed.A high-speed,low-power3-level dynamic latch comparator was designed and implemented.A low-power,small-size,segmented capacitive charge redistribution was adopte for DA conversion.The registers based on D trigger was applid for logic control.The main circuits were simulated and analyzed by Cadence Spectre Software.The designed parameters was verified with in-depth analysis of the simulation results.According to the layout design rules,Virtuoso was used to complete the design and verification of the circuit layout.The temperature measurement range of the designed circuit is from-40°C to 125°C,the measurement accuracy is less than±1°C,and the resolution of the AD conversion is 8bit.The simulation results show that the bandgap reference voltage temperature drift coefficient is 12.037ppm/°C,and the linear relationship between V_BE and temperature is?-3.7157T+2489?mV.When the temperature is 27°C,and the input frequency is 3.83 MHz,under tt corner,the SNDR is 49.3 dB,the ENOB is 7.9,and the SFDR is 64 dBc.Under the same conditions,transient analysis shows the conversion time is 2.6ns.Power consumption simulation measures the power is 500?W without reference buffer.The area of the core circuit layout is 232.15?m×120.75?m.