Broad Spectrum Response Photosensitive Organic Field-Effect Transistors Based Small Molecular Bulk-Heterojunction

In recent years,the photosensitive organic field effect transistors?PhOFET?has been extensively studied.However,the study of PhOFET reports attention focused on how to improve the light sensitive characteristics,and researches of wavelength response range are not too many.The ideas about how to design broad spectral response PhOFET was put forward in this paper,and around this theme launched research work.First,the structural“gate/gate dielectric/C₆₀/PTCDA:AlClPc?weight ratio 1:1?/Au?source and drain?”-binary bulk heterojunction broad spectral PhOFET was prepared,and the photoelectric properties were characterized.1.Based on SiO₂gate dielectric binary bulk heterojunction PhOFET was developed,which has a large light response of wavelength range 405⁸50 nm.when the incident power is 0.15?W,under 532 nm illumination showed the maximum photoresponsivity?R?is 0.5 A/W.under 850 nm illumination,the device showed the minimum R is 0.09 A/W.And the average R is 0.3 A/W.2.To study the gate dielectric material about how to impact on the device performance,preparation and characterization of PVA as the gate dielectric devices.The results showed that the photoresponsivity and light to dark current ratio are higher than that of SiO₂gate dielectric corresponding devices.The average R of 405 nm,532 nm,655 nm,808 nm and 850 nm is 1.9A/W under the illumination power at 0.15?W.Second,the structural“gate/gate dielectric/C₆₀/PTCDA:AlClPc:PbPc?weight ratio 1:1:1?/Au?source and drain?”-ternary heterojunction broad spectral PhOFET was prepared,and the photoelectric properties were characterized.1.The photoresponse of SiO₂gate dielectric ternary bulk heterojunction PhOFET is higher than the binary bulk heterojunction corresponding devices.The average R of 405 nm,532 nm,655nm,808 nm and 850 nm is 0.9 A/W under the illumination power at 0.15?W.2.The photoresponse of PVA the gate dielectric ternary bulk heterojunction PhOFET is higher than corresponding bulk heterojunction devices,also higher than that of SiO₂gate dielectric devices.The average R of 405 nm,532 nm,655 nm,808 nm and 850 nm is 4.0 A/W under the illumination power at 0.15?W.