Study On Performances Of N-PCBM/p-Si Hybrid Solar Cells

Since the increasing energy demand from human beings,the development of renewable clean energy has became essencial.Thus,solar cells which convert solar energy into electricity have aroused extensive interests and the development of low-cost,high power conversion efficiency solar cells has always been a frontier topic in the field of new energy devices.Among various types of cells,organic-inorganic hybrid solar cell is a type of low-cost solar cell with great development potential,because it not only takes advantages like the well stability,high carrier mobility,and mature processes of inorganic semiconductor materials,but also combines organic semiconductor materials that have the advantages of low cost,excellent plasticity,and can be prepared by the simple solution method,thus,there is great significance to research on new organic-inorganic hybrid solar cells.In this thesis,we have prepared n-PCBM/p-Si organic-inorganic hybrid solar cells which p-type silicon is used as the substrate,and PCBM?[6,6]-phenyl-C61-butyric acid methyl ester?is used as the n-type layer.And the performances of the n-PCBM/p-Si hybrid solar cells are improved through further optimization of device on structures and preparation conditions.The main research contents and the conresponding results are as follows:?1?The fabrication process of n-PCBM/p-Si hybrid solar cell was explored,and the feasibility of Ag/n-PCBM/p-Si/Au hybrid structure was clarified experimentally.The performances of the cells were studied,and hybrid solar cell with a short circuit current density(J_sc)of 5.57 mA/cm²,an open circuit voltage(V_oc)of 0.40 V,and a fill factor?FF?of 66.63%was obtained.By sputtering a thin layer of ITO on the top of device as a transparent conductive electrode,the light absorption of the window layer was improved,and J_sc was increased to 18.72mA/cm².?2?The effects of the thickness,annealing time,and annealing temperature of the hole-transporting layer MoO_x on the performances of n-PCBM/p-Si hybrid solar cells were studied.The results show that the performance of the solar cell reached the best with a short-circuit current density of 12.99 mA/cm²,an open circuit voltage of 0.42 V,and power conversion efficiency of 3.06%when the thickness of MoO_x is10 nm,the annealing temperature is 200°C,and the annealing time is 10 min.?3?The effect of ultrathin copper layer insertion at the top of device on the performances of n-PCBM/p-Si hybrid solar cells was studied.The optoelectrical properties of the window layer were improved and thus efficient power convertion could be observed,while the area of n-PCBM/p-Si hybrid solar cells increased from0.3×0.3 cm² to 1.3×1.3 cm².As the results shown,the best thickness of the ultrathin copper layer is 8 nm,which could result in optimized sheet resistance?R_s?and transmittance of the window layer,then a J_sc of 19.41 mA/cm² was obstained.