Performance Optimization And Research Of Lead-Free Perovskite Solar Cell Devices

Perovskite solar cells have become a leader in the field of solar cell research due to their excellent photoelectric characteristics,low manufacturing cost and simple manufacturing process,and are widely concerned by researchers.However,high-efficiency perovskite solar cells cannot be separated from the participation of Pb element.The high toxicity of Pb element is contrary to the original intention of energy saving and environmental protection of solar cells,which seriously hinders the industrial development of perovskite solar cells.This article mainly optimizes the optical performance of lead-free Sn-based perovskite solar cell devices by doping.The specific work includes the following three aspects:（1）By means of Cl ion doping,the perovskite crystal structure is changed to optimize the performance of the perovskite solar cell device.The system explores the optical performance,surface morphology,crystallinity and other characteristics of halogenated(FASn Cl_xI_3-x)battery devices when x is 0,0.2,0.3,0.4.For the FASn Cl_xI_3-x perovskite battery,as x increases,the device performance first increases and then decreases.At x=0.3,the perovskite battery device has the best performance,the open circuit voltage is 0.47V,and the short circuit current is 9.88 m A·cm^-2,the fill factor is 63.72%,and the photoelectric conversion efficiency is 2.98%.（2）By adding ScA to the anti-solvent,the surface morphology and crystallinity of the perovskite film can be adjusted.Using chlorobenzene as the anti-solvent,the performance and crystallinity of the perovskite battery device at the ScA doping concentration of 0 mg/ml,1 mg/ml,2 mg/ml,and 3mg/ml were compared.The results show that ScA does not enter the perovskite crystal structure,but optimizes the performance of the battery device by changing the concentration of the anti-solvent.With the increase of ScA doping concentration,the PCE of the device showed a trend of first increasing and then decreasing.When the ScA doping concentration was 2 mg/ml,the device performance was optimal,and the photoelectric conversion efficiency was increased from 2.02%to4.39%.（3）By doping sulfamic acid（SA）in the perovskite precursor solution,the short-circuit current of the device is increased,thereby improving the photoelectric conversion efficiency of the device.The effects of different SA doping concentrations on the morphology,crystallinity,and performance of perovskite battery devices were systematically investigated.The experiment found that when the doping concentration is less than 1.0 wt%,the device performance increases with increasing SA doping concentration,and when the doping concentration is greater than 1.0 wt%,the device performance decreases with increasing SA doping concentration.When the concentration is 0.7wt%,the device performance is optimized,and the photoelectric conversion efficiency reaches2.96%.The surface morphology of the perovskite light-absorbing layer shows that the prepared perovskite film is most uniform and dense with fewer defects when the doping concentration is 0.7wt%.