Preparation And Research Of Sb-based Thin Film Solar Cell

CIGS and Cd Te have become the representatives of thin film solar cells due to their excellent photoelectric conversion efficiency and good stability.However,In,Ga and Te are rare elements,and the toxicity of Cd has limited their development.It is an urgent problem to find new absorbing materials.In recent years,CuSbS₂ and Sb₂Se₃are regarded as excellent light absorbing materials because of their rich element reserves,high light absorption coefficient,non-toxic,pollution-free and low melting point.The main work of this thesis is to prepare and study CuSbS₂ thin film and its solar cell.The main purpose of developing this kind of battery is to replace CIGS solar cell.We sprayed pyrolysis from metal chloride aqueous solutions,followed by sulfurization method,obtained phase-pure and well-crystallinity CuSbS₂ thin films.The structural,optical and electrical properties of CuSbS₂ especially the influence of the sulfurization temperature during the preparation process have been systematically studied.The optimal sulfurization temperature is 400?was determined.Finally,a P-type CuSbS₂semiconductor thin film with a band gap of 1.53e V was successfully prepared.The conduction mechanism of CuSbS₂ at low temperature has been studied for the first time.We found at measurement temperatures higher than 140 K the electrical conductivity of the CuSbS₂ film is dominated by band conduction and nearest neighbor hopping?NNH?.At temperatures below 140 K the conduction is predominantly affected by variable range hopping?VRH?.On the basis of sufficient research on the electrical properties of CuSbS₂ thin film,we deposited Mo back electrode by magnetron sputtering,Cd S buffer layer was deposited by chemical bath deposition,i-Zn O and Zn O:Al window layer were deposited by magnetron sputtering and Ag electrode was prepared by print.Finally,we obtained a CuSbS₂ thin-film solar cell based on Glass/Mo/CuSbS₂/Cd S/i-Zn O/Zn O:Al/Ag structure.Its photoelectric conversion efficiency is 0.34%,which is currently the highest efficiency by spray pyrolysis.In addition to developed CuSbS₂ batteries to replace CIGS,this paper also developed Sb₂Se₃ solar cell to replace Cd Te.This thesis We uses co-evaporation method to evaporate Sb₂Se₃ in a selenium-enriched environment and spray pyrolysis then selenization to prepare Sb₂Se₃ thin films.Sb₂Se₃ thin films prepared based on the co-evaporation method are used as the absorption layer.The Cd S window layer was deposited by chemical bath deposition,the Au electrode was deposited by thermal evaporation.Finally,we obtained a Sb₂Se₃ thin-film solar cell based on FTO/Cd S/Sb₂Se₃/Au structure,Its photoelectric conversion efficiency is 3.93%,In addition,we also prepared Ti O₂/Cd S double buffer layer of Sb₂Se₃ thin-film solar cells by spin coating Ti O₂.