Preparaation And Properties Study Of Metal Grid Electrode

With the development of intelligent devices,new electronic devices need to meet the new requirements of flexibility and wearability.At present,tin doped indium oxide(ITO)transparent conductive film is the main transparent electrode for display device,but the scarcity of indium metal and the brittleness of material itself restrict its further development in large-scale preparation,flexible processing and wearability.Therefore,it is urgent to find a transparent electrode material to replace ITO.The metal grid electrode has excellent conductivity,bendability and light transmission.In order to obtain the flexible metal grid electrode with good photoelectric properties,two methods are used to prepare the randomly arranged metal grid electrode and the patterned metal grid electrode.The main research contents are as follows:(1)The effects of different preparation conditions on the morphology and photoelectric properties of metal grid electrode were obtained by controlling the spray pressure,spray distance,spray time,substrate heating temperature and other preparation conditions.The optimum preparation conditions were obtained,including spraying pressure of 0.03 mpa,spraying distance of 13 cm and substrate heating temperature of 80 ?.By adjusting the deposition density of silver nanowires,the optical transmittance of metal grid electrode was optimized.When the spraying time is 150 s,the transmittance is 84%,and the square resistance is 36.7 ? / sq.(2)In order to improve the problem that the resistance of metal grid electrode is too large when the deposition density of silver nanowire is low.In this paper,the electrical properties of metal grid electrode are optimized by hot pressing and electric sintering.In the process of optimizing the electrical properties of metal grid electrode by hot pressing,the square resistance of metal grid electrode is reduced from 3.8k ? / sq to 18.7 ? / sq after heating 150 ?,pressurizing 10 kg and hot pressing for 20 min.In the process of optimizing the electrical properties of metal grid electrode by electric sintering,the square resistance of metal grid electrode is reduced from 752 ? / sq to 62.7 ? / sq.(3)The patterned metal grid electrode was prepared by ink-jet printing technology.By controlling the four main conditions of printing voltage,printing speed,printing grid interval distance and annealing temperature,the influence of different preparation conditions on the morphology and photoelectric properties of metal grid electrode was obtained.Finally,a metal grid electrode with a transmittance of 82.907% and a square resistance of 68 ? / sq was prepared.