| Energy is the source of human social development as well as the basic guarantee for people’s livelihood.Since the 21st century,with the development and progress of science and technology,human society is increasingly dependent on energy.In order to meet the urgent needs of social development for energy,new energy gradually emerging,solar energy is recognized as one of the most potential renewable energy,photovoltaic power generation technology has attracted worldwide attention.In the field of solar cells,new metal chalcogenides have been extensively studied because of their excellent photoelectric properties.Among them,Sb2S3 and Sb2Se3 have many advantages,such as simple composition,abundant reserves,low price,various preparation methods,suitable optical band gap and large absorption coefficient,which lay a foundation for the preparation of high efficiency and low consumption solar cells.However,Sb2S3 has a large optical band gap(1.7 eV)and its solar devices have a large open-circuit voltage but a small short-circuit current.However,Sb2Se3 has a low optical band gap(1.1-1.3 eV)and high short-circuit current and low open-circuit voltage.At present,the photoelectric conversion efficiency of solar cells using Sb2S3 and Sb2Se3 as the absorption layer materials has reached 7.5%and 7.6%.However,these results still can not meet the market requirements,and improving the photoelectric conversion efficiency and manufacturing costs of such cells has become the key to our research.In this paper,based on the Sb2S3 thin films prepared by laser pulse deposition(PLD),on the one hand,Sb2S,thin films with controllable morphology and thickness were prepared by laser pulse deposition,on the other hand,Sb2S3 and Sb2Se3 could be deposited simultaneously by laser pulse deposition(PLD).Sb2(S1-xSex)3 was prepared.The advantages of Sb2S3 and Sb2Se3 were complemented to obtain more efficient batteries.The first chapter describes the principle and development of solar cells.Various kinds of solar cells,especially organic and inorganic thin film solar cells,are summarized in this paper.The preparation methods of thin film materials are also introduced.At the end of the chapter,I put forward my master’s research content.In the second chapter,we introduce the basic process of Sb2S3 thin films and planar heterojunction solar cells fabricated by laser pulse deposition,and explain the analysis and testing methods of thin film materials and cells used in this paper.In the third chapter,we have explored the conditions of laser pulse deposition for preparing Sb2S3 thin films.In addition,we use FTO substrate/dense TiO2/Sb2S3/holetransport layer Spiro-OMeTAD/Au to prepare solar devices.Finally,the photoelectric conversion efficiency of Sb2S3 solar cells prepared by pulsed laserdeposition(PLD)was 3.98%.In the third chapter,we have explored the conditions of laser pulse deposition for preparing Sb2S3 thin films.In addition,we use FTO substrate/dense TiO2/Sb2S3/hole transport layer Spiro-OMeTAD/gold Au to prepare batteries.Finally,the photoelectric conversion efficiency of Sb2S3 solar cells prepared by pulsed laser deposition(PLD)was 3.98%.Sb2(S1-xSex)3 thin films were deposited by pulsed laser deposition with Sb2S3 and Sb2Se3 mixed targets.The Sb2(S1-xSex)3 compound with gradient band gap was successfully prepared by annealing at 310℃ and applied to planar heterojunction solar cells with FTO substrate/dense TiO2/Sb2(S1-xSex)3/hole propagation structure.The transport layer Spiro-OMeTAD/Au improves the transmission rate of electrons and the short-circuit current density of Jsc.The fourth chapter summarizes and prospects the work during the master’s degree. |
