Investigation Of Silicon Homo-heterojunction Solar Cells

Si heterojunction with intrinsic thin layer(HIT)solar cell has been demonstrated effective to realize high efficiency,but it is much sensitive to fabrication/physical parameters,resulting in a challenge to fabricate high-performance solar cells stably in mass production line.In the recent years,Si homo-heterojunction(H-H)solar cell,which encompasses both homojunction and heterojunction,has attracted intensive interests because of its potential to overcome the challenge.Nevertheless,the effects of the fabrication/physical parameters on the Si H-H solar cell are not fully understood yet.In this study,we have investigated the influences of diverse physical parameters on the performances of Si H-H solar cell together with their underlying mechanisms by the aid of AFORS-HET simulation.It is found that the performances of Si H-H solar cell are less sensitive to(i)the work function of the transparent conductive oxide layer,(ii)the interfacial density of states at the hydrogenated amorphous silicon/crystalline silicon(a-Si:H/c-Si)interface,(iii)the peak dangling bond defect densities within the p-type a-Si:H(p-a-Si:H)layer,(iv)the doping concentration and(v)the thickness of the p-a-Si:H layer,when compared to that of the conventional HIT counterparts.These advantages are due to the fact that the interfacial recombination and the recombination within the a-Si:H region are less affected by all the above parameters,which fundamentally benefit from the field-effect passivation of the homojunction.Therefore,the design of Si H-H structure can provide an opportunity to produce high-efficiency solar cells more stably.