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Preparation Of Metal Oxide On The Surface Of Crystalline Solar Cell And Its Synergistic Properties

Posted on:2020-04-11Degree:MasterType:Thesis
Country:ChinaCandidate:Y C XuFull Text:PDF
GTID:2392330575460844Subject:Applied Chemistry
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Solar energy is inexhaustible,which means that using it is vital to the future development of mankind,especially in today's limited fossil energy.In recent decades,the photoelectric conversion efficiency of crystalline silicon solar cells has been significantly improved,but its general application and further development are limited by high cost and complicated manufacturing processes.In recent years,research on semiconductor metal oxide synergistic crystalline silicon solar cells has become a research hotspot for solar cell.In our experiments,the spin coating method and the rapid thermal processing method are the core.On the surface and back surface of the crystalline silicon solar cell,a thin layer of Sb2Ox/CdO and Mo O3 metal oxide is deposited and formed to form Sb2Ox/CdO/p-Si/Mo O3 composite.Battery structure.We use field emission scanning electron microscope analyzer?FESEM?,X-ray powder diffraction analyzer?XRD?,X-ray photoelectron spectroscopy?XPS?,solid ultraviolet-visible-near-infrared diffuse reflectance spectroscopy?UV-VIS-NIR?,semiconductor material minority carrier lifetime measuring instrument and four-probe tester characterize the structure,morphology,optical properties,minority carrier lifetime and sheet resistance of the film.The photoelectric conversion performance of the composite battery was tested using a solar simulator,a solar cell spectral response/quantum efficiency?QE?/IPCE test system,and an electrochemical workstation.In our study,the metal oxide layers of Sb2 Ox and CdO,which are wide-bandgap semiconductors,form a heterojunction structure with silicon at the top of the cell,charging t he electron transport layer,acting as a carrier transport,anti-reflection and passivation layer..The heterojunction structure produces a stronger built-in electric field that promotes better separation and transport of carriers.The CdO nanoparticle layer has a rough surface which allows incident light to refract and scatter multiple times on the surface.At the same time,Sb2Ox has a wide bandgap?3.44 eV?that allows the absorption of the solar spectrum to be extended to360 nm,so more high-energy photons are absorbed and converted into useful charge carriers.MoO3 is a wide-band gap?3.3 eV?and has a high work function?3.3 eV?transition metal oxide.It acts as a hole-selective layer on the back side of the cell,which can further improve the potential of the back-field.To block the role of electron transport holes.MoO3 as a back-field passivation layer reduces the recombination of carriers on the back surface,thereby improving efficiency.In our experiments,a significant increase in short-circuit current(30.426 mA/cm-2),open-circuit voltage?0.558 V?,fill factor?58.67%?,and external quantum efficiency and internal quantum efficiency were observed.The final conversion efficiency of polycrystalline silicon solar cells has increased by 18.03%on the basis of the original.The experiment simplifies the process conditions of the battery sheets and reduces the cost.
Keywords/Search Tags:Wide band gap semiconductor, heterojunction, hole transport layer, electron transport layer, crystalline silicon solar cell
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