TID Effect Modeling Of Multi-output Power Supply Based On VHDL-AMS

Power supply,as the power source,voltage protection and abnormal protection devices of electronic systems,have become an integral part of electronic systems.The precondition for the good operation of the electronic system is the normal operation of the power supply.However,radiation can cause degradation of the performance of electronic systems and devices and even functional failure,and the influence of radiation has become an important factor that cannot be ignored in the development of electronic technology.Total ionizing dose effect(TID)is a kind of irreversible damage effects,and power is the most sensitive device to TID.Therefore,the precondition for the stable operation of the entire electronic system is to study the effect of TID on the power supply.In general,to study the TID of multi-output power supply,a simulation prediction model needs to be established.At present,most of the methods about TID study of the device are starting from the physical mechanism,and those methods are based on the manufacturing process of exploration of the internal physical processes affected by total dose radiation.But those methods are particularly difficulty to study of the TID of large scale integrated circuit.The behavior level modeling method not only ensures the accuracy and usability of the model in practice,but also saves simulation time and shortens the design cycle.There is no need to understand the internal process composition of the device,and we can use the input and output data to describe the internal logic.This establishes a multi-output power supply behavior level model.However,the study on behavior modeling of TID of multi-output power supply is still relatively lacking from previous literature.In practice,the most users commonly used power supplies are multi-output power supplies,including a Low Dropout Regulation(LDO).It has the advantages of low noise,simple peripheral circuits,wide application and so on.Therefore,this thesis use multi-output LDO power supply as the subject of this study.In order to meet the needs of behavior modeling of TID for multi-output power supply,a novel method based on very high speed integrated circuit hardware description language-analog mixed signal(VHDL-AMS)is proposed.First,this thesis introduced the structure of LDO and the TID of LDO.The methods for modeling the TID at home and abroad are discussed,and it is pointed out that using the behavioral level modeling method can improve the simulation efficiency and avoid the difficulties caused by the lack of property rights protection and production process parameters.At the same time,it introduces the behavioral level modeling tool VHDL-AMS,which is a modeling language that can describe mixed circuits of digital and analog.Then,this thesis describes the process of building a multi-output power supply model using the multiple input and multiple output(MIMO)method.A multi-variable system identification and system identification toolbox are used to solve transfer functions that can characterize the behavior of multi-output power supply,thereby a behavioral level model of multi-output power supply is established.Next,the multi-output power supply chip LT3029 is selected to verify the validity of the proposed method for modeling the TID of multi-output power supply.Before the modeling,an experimental device for obtaining experimental data of multi-output power supply under TID is designed.The TID experimental environment and modeling tools are introduced.Then,the TID of multi-output power supply method based on VHDL-AMS is realized.Finally,taking into account the main factors affecting the TID,a TID experimental conditions configuration and data collection board are designed.Based on the modeling method proposed in this thesis,we obtained experimental data to analyze experimental results and get conclusions.The experimental results show that the input current and output voltage of multi-output power supply gradually increase with the accumulation of dose,and the power supply's voltage regulation performance can be damaged as the dose gradually accumulates.At the same time,the performance of the multi-output power supply under the TID also influence by the number of the chip's radiation dose rate.The model proposed in this thesis can represents these responses and verify the correctness of the proposed modeling method well.And the model is scalable and adaptable.It provides usable methods and research ideas for behavioral modeling of the TID of multi-output power supply.