Research On Electrical Model Of High Voltage IGBT Module

Modular multilevel converter(MMC)is a kind of topological structure of voltage source converter,and the sub module is mainly composed of IGBT and diodes for half bridge and full bridge structure.IGBT module has been widely used in the field of high voltage DC transmission technology,such as Source Converter Voltage(VSC),light direct current transmission and so on.However,the switching frequency of the device is high,which can produce high switching loss and temperature rise and may affect the performance and life of the device parameters.Therefore,it is important to study the influence of the transient process and the temperature loss and to establish the model.In this paper,the main research object of the paper is to analyze the physical structure,working principle,static and dynamic characteristics of IGBT device.First of all,the development of power electronic devices and the physical structure and working principle of IGBT device are introduced.The research status of domestic and international modeling simulation is analyzed.Secondly,from the physical structure of IGBT,the IGBT electrical equivalent diagram is presented.Based on the switching dynamic and static characteristics,through mechanism,electrical equivalent,device datasheet analysis,mathematical fitting and other methods,using the voltage controlled current source,variable capacitance,and custom programming module,the electrical model of IGBT module is realized in SIMULINK,SABER,PSCAD and other circuit simulation platform.Thirdly,from the static and dynamic characteristics of the IGBT module,based on the method of mathematical integration,analyzing the switching loss and the state loss of the IGBT module,the average loss model is established.By introducing thermal resistance concept,combining with the corresponding curve of the device manual,the thermal resistance parameters of IGBT module are extracted,and the IGBT junction temperature is calculated,and the thermal resistance model of IGBT is established.For the main IGBT components of the 1700V,3300V and 6500V,the model parameters are extracted and the thermal resistance analysis is carried out to verify the validity of the model and Provide the basis for the heat dissipation design.Finally,analyzing the existing IGBT device thermoelectric coupling model,selecting the internal parameters with temperature variation,and analyzing its impact on the electrical characteristics,combined with the electrical model,the average loss and thermal resistance model,the IGBT module is formed,and the IGBT model is obtained.