Graphene Oxidation Optimization And Structural Design And Preparation Of Side-chain Branched Polythiophene Complex

Graphene and graphene oxide(GO)have huge application potential in the fields of organic semiconductors,biosensors,and supercapacitors due to their special large planar structure.However,graphene is easily compounded in the matrix,which limits its performance.It is necessary to optimize its performance by adjusting its size,defect level,and surface functional structure.Due to its advantages of high air stability,easy availability,and excellent electrical properties,poly 3-hexylthiophene(P3HT)is currently one of the most commonly used semiconductor polymer materials,and its side chain is easy to functionally adjust to optimize semiconductor performance.This article optimizes the GO structure by adjusting the preparation conditions and post-processing methods,and further prepares covalently linked graphene oxide/polythiophene composite materials through P3 HT side chain engineering,laying the foundation for further improving the performance of graphene-based semiconductor materials:(1)Adjust the oxidation time after adding water in the process of preparing the graphene oxide by Hummers method,using FTIR,Raman and other methods to prove that the oxidation of water for 2 hours can improve the oxidation degree and thermal stability of GO,reduce the gap between GO layers;extend after adding water The oxidation time will not further increase the degree of GO oxidation.(2)By analyzing the structure and properties of the separated products at different stages in the centrifugal post-treatment process of GO samples with different oxidation degrees,it was found that the traditional centrifugal post-treatment method lost a considerable part of high-quality GO products.FTIR,XPS and other test results show that the lost The GO product is smaller in size and contains fewer impurities;as the GO sample oxidizes more,the water solubility increases,and the proportion of GO lost is further increased.(3)Graphene(rGA)functionalized with thiopheneamine monomer is polymerized in situ with 3-hexylthiophene(3HT).The graphene side-linked polythiophene composites with rGA unit ratios of 0%,0.5%,1%,2% and 5% were prepared.The results show that adding rGA can increase the molecular weight,molecular chain regularity and thermal stability of P3 HT,which is beneficial to the application of organic semiconductor devices.The UV-Vis absorption peak of the polymer gradually red-shifts with increasing rGA ratio,and the optical energy gap continues to increase;when the amount of rGA added exceeds 2%,the absorption peak begins to blue shift due to the increase in the degree of graphene oxide recombination,and the optical energy gap decreases.small.The graphene/polythiophene covalently bonded composite has a threshold permeability value of 2%,which exceeds the graphene/polythiophene direct blend composite,which is beneficial to increase the amount of graphene added and give full play to the performance potential of graphene.