Proton Irradiation Effect And Diffusion Bonding Mechanism Of TC4 Titanium Alloy At Low Temperature

In order to realize the low temperature diffusion connection of TC4 Titanium alloy,this paper proposes to use the proton irradiation pretreatment method on the surface to be connected,using the defect mechanism of the proton irradiation effect and the hydrogen placement mechanism to promote the low temperature diffusion connection to achieve 700 ℃ Low temperature diffusion connection of TC4 Titanium alloy.This paper mainly studies the proton irradiation effect of TC4 Titanium alloy and its low-temperature diffusion connection mechanism through experiments and multi-scale computer simulation methods.First,the effects of proton irradiation of TC4 Titanium alloy were observed through experiments,and the proton irradiation process was simulated by Monte Carlo’s SRIM and molecular dynamics LAMMPS simulation software,and the mechanism of proton irradiation effects of metals was explored accordingly.The results of the investigation show that the surface roughness of the TC4 Titanium alloy after proton irradiation does not change much,and two effects will occur in the process: the defect effect caused by the cascade collision and the hydrogen placement effect caused by the incident H+.Afterwards,on this basis,vacuum diffusion connection was carried out on the TC4 Titanium alloy after proton irradiation treatment,and the diffusion connection before and after irradiation was observed by metallographic microscope and scanning electron microscope to verify the proton irradiation to achieve low temperature diffusion connection.effect.The molecular dynamics LAMMPS software was used to simulate the mechanism of low temperature diffusion connection caused by irradiation.The results of the investigation show that under the same conditions,the proton irradiated samples achieve diffusion bonding at low temperature.The simulation shows that the diffusion coefficient of the irradiated sample is significantly larger,the width of the diffusion area is significantly increased,and the degree of lattice disorder is significantly increased,which shows that the irradiation promotes the low-temperature diffusion connection.Finally,the ANSYS finite element simulation of the dynamic recrystallization process in the low-temperature diffusion connection process was carried out,and the temperature field change and stress-strain curve of the diffusion connection process were simulated.The dynamic recrystallization process in the low temperature diffusion connection process was explored through the cellular automaton idea to explore the effects of different diffusion connection parameters and irradiation conditions on dynamic recrystallization and the effect of the connected microstructure.