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Study Of Magnetic And Electrical Transport Properties Induced By Oxygen Vacancies In ABO3 Perovskites

Posted on:2021-02-13Degree:MasterType:Thesis
Country:ChinaCandidate:Y J PeiFull Text:PDF
GTID:2381330611971996Subject:Materials science
Abstract/Summary:PDF Full Text Request
Transition metal oxides have abundant physical properties due to the existence of multivariant interactions of lattice,charge,orbit,and spin.Oxygen defect engineering is one of the important methods to study the novel properties of transition metal oxides.Oxygen defects include oxygen vacancy and oxygen doping.This work focuses on the magnetic and electrical transport properties induced by oxygen vacancies in perovskite.Three typical perovskite oxide materials of Fe-SrTiO3-δ,BaTiO3-δ,and Sr-NdNiO3 were used as prototypes to study the effect of oxygen vacancies on magnetic properties and electrical transport properties.The main contents are as follows:1.Fe-SrTiO3-δwas prepared by ultra-high vacuum annealing.Oxygen vacancies cause 0.05%crystal lattice expansion and high conductivity.The type of carriers are electrons,the carrier concentration and the maximum mobility is 1.084×1019/cm3 and8493 cm2/V·s,respectively.Oxygen vacancies induce ferromagnetism,and the coercive field reaches 7700 Oe at 2 K.A new magnetic phase transition was discovered in Fe-SrTiO3-δat 18 K,which originated from the coeffect of oxygen vacancies and metal cations,and forms two magnetic phases Fe3+-O2--Ti3+and Ti3+-O2-in the crystal.2.BaTiO3-δwas prepared by ultrahigh vacuum annealing and hydrogen high-temperature annealing.BaTiO3-δsamples were multiferroic semiconductors.BaTiO3-δis ferromagnetic which is derived from oxygen vacancies.BaTiO3-δprepared by hydrogen annealing has obvious room temperature ferromagnetism with a coercive field of 400 Oe at 2 K.Annealed BaTiO3-δis a semiconductor.The ferroelectricity of BaTiO3-δdecreased after annealing,and the SHG signal intensity decreased by 59%.3.Sr-NdNiO3 thin films were grown by the off-axis magnetron sputtering method under different conditions of temperature and oxygen pressure.The growing temperature of 550℃and oxygen pressure of 0.02 Torr is the best way to grow the film.The thickness of the film grown in 5 hours is about 20 nm and the metal-insulation transition of the film appears at 75 K.The XRD diffraction peak of Sr-NdNiO3 thin-film disappeared after calcium hydride annealing,and the thin film became an insulator.
Keywords/Search Tags:Perovskite oxide, oxygen vacancy, magnetic transition, metal-insulation transition, electrical transport properties
PDF Full Text Request
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