Memristor Based On Graphene Oxide Quantum Dots And Hafnium Dioxide And Electrical Characterization Optimization Of Conductive Atomic Force Microscope

The continuous development and progress of nanoscience and technology as a subject area have greatly promoted the development of today's society.Nanotechnology has involved all aspects of our lives,such as smart phones,portable computers,smart bracelets and other electronic products.At the same time,the research and development of various nanomaterials have also laid a solid foundation for the development and innovation of science and technology in other disciplines.In this text,a commercially available zero dimensional nanomaterial-graphene oxide quantum dots is systematically studied and analyzed,and the memristor using this material and HfO2 dielectric film as the dielectric layer material is electrically characterized and its dielectric breakdown mechanism has been explored and analyzed.Finally,the method of using conductive atomic force microscope to characterize the electrical performance of memristor was further optimized.This paper mainly includes three parts,the specific contents are as follows(1)Research on dispersion conditions and statistical analysis of the size,uniformity and internal structure of commercial graphene oxide quantum dots.The results show that the longer ultrasonic time is,the better the graphene oxide quantum dots with small size and high dispersion are,which is beneficial to the graphene oxide quantum dots with more uniform distribution.In addition,in the process of characterizing a single graphene oxide quantum dot,it was found that the thickness of the edge position and the center position are different,which may affect the variability of graphene oxide quantum dot-based electronic devices.(2)Relevant research on HfO2 memristors based on graphene oxide quantum dots and high-K dielectric materials.The experimental results of memristors based on graphene oxide quantum dots show that due to the uneven thickness of the quantum dots,the use of it alone as the dielectric layer material of the memristor will result in the failure to obtain a more stable breakdown voltage;The experimental results of the memristor based on the high-K dielectric material HfO2 shows that the breakdown mechanism is mainly achieved by the capture and release of charge.And the influence of temperature on the device is positively correlated,but it will not cause the deterioration of the device(3)In order to solve the problem that the conductive atomic force microscope(CAFM)can not apply high voltage to characterize the topography and current map of the sample while characterizing the electrical performance of the memristive device,the equipment is improved.In this work,the infinite remote control was used to realize the effect of the conductive module and the digital source meter of the CAFM connected to the atomic force microscope through a single-pole double-throw RF switch,so that it could switch to different modes(CAFM mode or source meter),and the position of the conductive tip will not be changed during the switching process,which will enable the instrument to simultaneously characterize the morphology and current map of the sample at a higher voltage,which greatly compensates for the shortcomings of the AFM instrument,making those skilled in the art can more easily and efficiently operate the instrument during the experiment,thereby effectively reducing the time cost of scientific researchers.