| With the rapid development of modern industrialization and population,the problems of energy and environment are increasingly prominent.Semiconductor photocatalysis technology is considered as an economic,renewable,green and safe technology,which is widely used to degrade water pollutants.graphite carbon nitride(g-C3N4)has developed rapidly in the field of photocatalysis due to its wide range of raw materials,simple synthesis,non-toxicity,and excellent thermal and chemical stability.However,the rapid recombination of photo-generated carriers,absorption of blue-violet light in the solar spectrum,and low specific surface area have prevented the application of g-C3N4 in the field of photocatalytic degradation.In order to improve the photocatalytic activity of g-C3N4 based photocatalyst,the methods of carbon doping and sensitization were used to enhance the visible light response range,increase the specific surface area of the material and reduce the recombination rate of photocarriers.The main research contents are as follows:(1)Carbon doped g-C3N4(C/g-C3N4)composite photocatalysts were prepared by high temperature thermal condensation with urea as the precursor and 4-aminobenzoic acid as the carbon source.FT-IR,XRD,XPS,SEM,BET,UV-Vis DRS,and EIS were used to characterize the structure,morphology,specific surface area,and photoelectrochemical properties of the composite photocatalyst.The photocatalytic performance of the composite photocatalyst under simulated visible light was studied with methylene blue as the target pollutant.The results show that the doping modification of C can regulate the band structure of C/g-C3N4,increase the photoresponse range of the composite photocatalyst,effectively inhibit the recombination of photogenerated carriers,and significantly improve the visible light photocatalytic activity.Under the optimal ratio,the specific surface area of C0.1%/g-C3N4 was 1.9 times that of g-C3N4.After 60min of illumination,the degradation rate of C0.1%/g-C3N4 on MB in aqueous solution reached 99.8%,far higher than that of g-C3N4 on 78.8%.(2)g-C3N4 was prepared by high temperature thermal polymerization using urea as the raw material.Itmodified by Perylene diimide derivatives(PASP)was prepared by simple hydrothermal method after g-C3N4 was mixed with PASP.The obtained photocatalyst was systematically characterized,and the photocatalytic performance of GCNx was investigated with MB as the target pollutant.The results show that with the introduction of PASP,GCNx has a new absorption band at 500~600 nm,which can significantly improve the response range of visible light,and reduce the recombination ratio of photogenerated electron hole pairs,providing more surface active sites with the increase of specific surface area and pore volume.In the study of the performance of MB degradation under visible light,the optimal ratio of GCN0.02%to MB degradation rate reached 95%within 40min,and the photocatalytic reaction rate constant of GCN0.02%was about 1.56 times of g-C3N4.(3)g-C3N4 was prepared by high temperature thermal polymerization with urea as a raw material.The g-C3N4composite photocatalyst(Zn Tc Pc/g-C3N4)sensitized by Tetracarboxyl substituted zinc phthalocyanine(Zn Tc Pc)dye was prepared by a simple hydrothermal method.The composition,morphology,and photoelectrochemical properties of the composite photocatalyst were characterized by XRD,SEM,UV-Vis DR,PL,and I-t.The photocatalytic performance of the composite photocatalyst under simulated visible light was studied using methyl orange(MO)as the target pollutant.The results show that Zn Tc Pc/g-C3N4 has a new absorption peak at 600~800nm,which significantly improves the absorption of visible light,and the photogenerated electron-hole pairs are rapidly separated and transferred.Compared with g-C3N4,the degradation rate of Zn Tc Pc1%/g-C3N4increased by 52.1%after 60 min of visible light irradiation,and the photocatalytic degradation rate constant of Zn Tc Pc1%/g-C3N4 reached5.3 times. |